MJD122 4A 100V TO-252 MJD122 NPN Darlington transistor YFW micro

Model: MJD122 Package: TO-252 Collector-Base Voltage BV(cbo): 00V Collector-Emitter Voltage BV(ceo): 100V Emitter Base Voltage BV(ebo): V Collector Current IC: 4A Direct Current Gain: VCE=3V IC=0.5A hFE=1000                        VCE=3V IC=3A hFE=1000 Collector-Emitter Saturation Voltage: IC=3A IB=2mA VCE(sat)=2V                                       IC=5A IB=20mA VCE(sat)=4V Pin Count: 3 Product Characteristics: Complementary to MJD127 Product Application: Medium power linear switch applicationsProduct Applications: Medium power linear switch applicationsProduct Applications: Medium power linear switch applicationsWelcome to consult "Youfeng Microelectronics" Our company is a high-tech enterprise specializing in research, development, production, and sales of semiconductor discrete devices. The company mainly produces and sells: general rectifier diodes, fast recovery diodes, high-efficiency diodes ultra-fast recovery diodes, Schottky diodes, low-drop Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast recovery rect bridge stacks, Schottky bridge stacks, TVS transient suppression diodes, ESD electrostatic protection elements, Zener diodes, transistors, thyristors, MOS fieldeffect transistors, etc. For more details, please visit our company's official website www.yfwdiode.com.