yfwdiode MOS transistor manufacture SGBJ2512 SGBJ data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_SGBJ2512 SGBJ_www.yfwdiode
Model: SGBJ2512
Package: SGBJ
Maximum repeat peak reverse voltage Vrrm: 1200V
Maximum RMS voltage Vrms: 1300V
Maximum DC blocking voltage Vdc: 1200V
Average rectifier forward current l (FAV): 25A
Positive electric surge peak I (FSM): 350A
Forward voltage VF: 1.18V
Reverse current IR: 3uA
Number of pins: 5
Product features: glass passivation chip structure, high surge current capacity
High temperature welding guaranteed 265°C/10 seconds, 0.375 inches (9.5 mm) lead length, 5 pounds (2.3 kg) tension
Product application: suitable for printed circuit boards
Welcome to consult Youfeng Microelectronics. Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor discrete devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes low-pressure descending Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast-recovery bridge stacks, Schottky bridge stacks, TVS transient suppression diodes, ESD electrostatic protection components, voltage-stabilized diodes, transistors, controlled silicon thyristors, MOS field effectors, etc. More details can be found on our official website www.yfwdiode.com.
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