yfwdiode MOS transistor manufacture KBP810 DJ KBP data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_KBP810 DJ KBP_www.yfwdiode.com
Model: KBP810 DJ
Package: KBP
Maximum repeat peak reverse voltage Vrrm: 1000V
Maximum RMS voltage Vrms: 700V
Maximum DC blocking voltage Vdc: 1000V
Average rectifier forward current l (FAV): 8A
Positive electric surge peak I (FSM): 170A
Forward voltage VF: 1.05V
Reverse current IR: 5uA
Number of pins: 4
Product characteristics: glass passivation junction, surge overload rating reaches a peak of 170 amperes
The plastic materials used have passed the flame retardant certification of the American insurer laboratory, with a grade of 94V-0.
High temperature welding guarantee 265°C/10
Product application: suitable for printed circuit board applications
Welcome to consult Youfeng Microelectronics. Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor discrete devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes low-pressure descending Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast-recovery bridge stacks, Schottky bridge stacks, TVS transient suppression diodes, ESD electrostatic protection components, voltage-stabilized diodes, transistors, controlled silicon thyristors, MOS field effectors, etc. More details can be found on our official website www.yfwdiode.com.
Previous: YFW20N02AD 20A 20V TO-252 marking:YFW20N02AD MOSFET yfwdiode brand
Next:BTB16Q-800C 16A 800V TO-263 markingBTB16Q-800C Controllable Silicon yfwdiode brand