KBP801 DJ 8A 100V KBP marking:KBP801 DJ Ordinary rectifier bridge stack yfwdiode brand

yfwdiode MOS transistor manufacture KBP801 DJ KBP data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_KBP801 DJ KBP_www.yfwdiode.com

Hits:282 times

Model: KBP801 DJ 

 Package: KBP 

 Maximum repeat peak reverse voltage Vrrm: 100V 

 Maximum RMS voltage Vrms: 70V 

 Maximum DC blocking voltage Vdc: 100V 

 Average rectifier forward current l (FAV): 8A 

 Positive electric surge peak I (FSM): 170A 

 Forward voltage VF: 1.05V 

 Reverse current IR: 5uA 

 Number of pins: 4 

 Product characteristics: glass passivation junction, surge overload rating reaches a peak of 170 amperes 

 The plastic materials used have passed the flame retardant certification of the American insurer laboratory, with a grade of 94V-0. 

 High temperature welding guarantee 265°C/10 

 Product application: suitable for printed circuit board applications 

 Welcome to consult Youfeng Microelectronics. Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor discrete devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes low-pressure descending Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast-recovery bridge stacks, Schottky bridge stacks, TVS transient suppression diodes, ESD electrostatic protection components, voltage-stabilized diodes, transistors, controlled silicon thyristors, MOS field effectors, etc. More details can be found on our official website www.yfwdiode.com.

Previous: YFW20N02AD 20A 20V TO-252 marking:YFW20N02AD MOSFET yfwdiode brand

Next:BTB16Q-800C 16A 800V TO-263 markingBTB16Q-800C Controllable Silicon yfwdiode brand

QQChat
ChatWechat
ConsultTelephone
+86 13650089053