Product characteristics: epital wafer structure Two independent NPN/PNP transistors in one package
Product features: epitaxial wafer structure Two independent NNP/PNP transistors in one package
Product characteristics: high collector current and SS8050W complementary
Product features: high collector current complements SS8550W
Collection electrode - emitter saturation voltage: IC=100mA IB=5mA VCE(sat)=0.3V
Product application: for VHF and UHF low-noise amplifiers
