yfwdiode MOS transistor manufacture GBJ2510S GBJS data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_GBJ2510S GBJS_www.yfwdiode.com
Model: GBJ2510S
Package: GBJS (with heat sink)
Maximum repeat peak reverse voltage Vrrm: 1000V
Maximum RMS voltage Vrms: 700V
Maximum DC blocking voltage Vdc: 1000V
Average rectifier forward current l (FAV): 25A
Forward Electric swelling peak I (FSM): 420A
Forward voltage VF: 1.1V
Reverse current IR: 5uA
Number of pins: 4
Product features: glass passivation chip, low reverse leakage current, high surge current capability
Terminal-to-shell isolation voltage: 2500V
Product application: suitable for printed circuit boards
Welcome to inquire about "Youfeng Microelectronics" Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor split devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes low-pressure drop Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast recovery rectifier bridge stacks, Schottky bridge stacks, TVS transient suppression diode More details can be learned from our website www.yfwdiode.com.
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